1 www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0 fqp10n50cf / FQPF10N50CF n-channel mosfet ? 10 a, 500 v, r ds(on) = 610 m(max.) @v gs = 10 v, i d = 5 a ? ? 100% a valanche tested ? ? fast recovery body diode this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy s trength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. absolute maximum ratings *drain current limited by maximum junction temperature thermal characteristics to-220 g s d d g s to-220f gs d symbol parameter fqp10n50cf FQPF10N50CF unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 10 10* a - continuous (t c = 100 c) 6.35 6.35* a i dm drain current - pulsed (note 1) 40 40* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 388 mj i ar avalanche current (note 1) 10 a e ar repetitive avalanche energy (note 1) 14.3 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) 143 48 w - derate above 25 c1 . 1 40 . 3 8 w / c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter fqp10n50cf FQPF10N50CF unit r jc thermal resistance, junction-to-case 0.87 2.58 c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w march 2013 fqp10n50cf / FQPF10N50CF n-channel qfet ? frfet ? mosfet 500 v, 10 a, 610 m? description features low gate charge (typ. 43 nc) low c rss (typ. 16 pf)
2 fqp10n50cf / FQPF10N50CF n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 7 mh, i as = 10 a, v dd = 50 v, r g = 25 ?, starting t j = 25c 3. i sd 10 a, di/dt 200 a/ s, v dd bv dss, starting t j = 25c 4. pulse test: pu lse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fqp10n50cf fqp10n50cf to-220 - - 50 FQPF10N50CF FQPF10N50CF to-220f - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a, t j = 25 c 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c - -0 . 5- -v / c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 10 a v ds = 400 v, t c = 125 c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 . 0 - - 4 . 0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5 a -- 0.5 0.61 ? g fs forward transconductance v ds = 40 v, i d = 5 a (note 4) -- 15 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1610 2096 pf c oss output capacitance -- 177 230 pf c rss reverse transfer capacitance -- 16 24 pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 10 a r g = 25 ? (note 4, 5) -- 29 67 ns t r turn-on rise time -- 80 170 ns t d(off) turn-off delay time -- 141 290 ns t f turn-off fall time -- 80 165 ns q g total gate charge v ds = 400 v, i d = 10 a v gs = 10 v (note 4, 5) -- 43 56 nc q gs gate-source charge -- 7.5 -- nc q gd gate-drain charge -- 18.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 10 a i sm maximum pulsed drain-source diode forward current -- -- 40 a v sd drain-source diode forward voltage v gs = 0 v, i s = 10 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 10 a di f /dt =100 a/s (note 4) -- 50 ns q rr reverse recovery charge -- 0.1 -- c www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0
3 fqp10n50cf / FQPF10N50CF n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [? ], drain-source on-resistance i d , drain current [a] 0 1 02 03 04 05 0 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 10a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0
4 fqp10n50cf / FQPF10N50CF n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fqp10n50cf for FQPF10N50CF figure 10. maximum drain current vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 not es : ? 1. v gs = 0 v 2 . i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1 . v gs = 10 v 2 . i d = 5.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. si ngle pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1 . t c = 25 o c 2 . t j = 150 o c 3 . single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ o c] www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0
5 fqp10n50cf / FQPF10N50CF n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fqp10n50cf figure 11-2. transient thermal response curve for FQPF10N50CF 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1 . z ?jc (t) = 0.87 0 c/w 2 . duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z ?jc (t) = 2.58 0 c/w 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0
6 fqp10n50cf / FQPF10N50CF n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0
7 fqp10n50cf / FQPF10N50CF n-channel mosfet peak diode recovery dv/dt test circuit & waveforms www.fairchildsemi.com ? 2006 fairchild semic onductor corporation fqp10n50cf / FQPF10N50CF rev. c0
8 fqp10n50cf / FQPF10N50CF n-channel mosfet dimensions in millimeters mechanical dimensions to-220 www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp10n50cf / FQPF10N50CF rev . c0
9 fqp10n50cf / FQPF10N50CF n-channel mosfet mechanical dimensions dimensions in millimeters to-220f www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp10n50cf / FQPF10N50CF rev . c0
10 fqp10n50cf / FQPF10N50CF n-channel mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor re serves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 ? www.fairchildsemi.com ? 2006 fairchild semiconductor corporation fqp10n50cf / FQPF10N50CF rev . c0
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